Split gate fet

Details Split gate fet Split gate fet

H - Electricity

01

L

356/30

H01L 29/78 (2006.01) H01L 29/06 (2006.01)

Patent

CA 1202427

Abstract Lateral FET structure is disclosed for bidi- rectional power switching. A split gate structure is provided to prevent unwanted formation of potential conduction channels in the OFF state of the FET. This enables the gate to be referenced in common to one of the source regions in the OFF state while still afford- ing high blocking voltage capability. A multicell matrix array is also disclosed.

430159

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