C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
204/96.08, 204/1
C23C 14/35 (2006.01) C23C 14/34 (2006.01)
Patent
CA 2023509
ABSTRACT OF THE DISCLOSURE: The present invention provides a target for use in DC magnetron sputtering, which is formed to be placed on the upper surface of a backing plate in a DC magnetron reactive sputtering apparatus and comprises a target member to be sputtered and a plurality of electrically insulating members provided to coat the upper surface of the target member or the upper surface of the backing plate so as to prevent the deposition of a metal compound or a nonmetal compound formed by DC magnetron reactive sputtering on non-sputter areas of the target member. By the use of the target according to the present invention, sputtering films with less defects can be obtained stably, thereby largely improving the productivity of an optical disk, etc.
Kisaka Yoshiyuki
Nishimura Naoki
Tamura Takanori
Goudreau Gage Dubuc
Kisaka Yoshiyuki
Mitsubishi Kasei Corporation
Nishimura Naoki
Tamura Takanori
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