Stabilized alkaline compositions for cleaning...

C - Chemistry – Metallurgy – 11 – D

Patent

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C11D 3/00 (2006.01) C11D 7/26 (2006.01) C11D 7/32 (2006.01) C11D 11/00 (2006.01) C23G 1/22 (2006.01) G03F 7/42 (2006.01)

Patent

CA 2425613

The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) one or more metal ion-free bases at sufficient amounts to produce a pH of about 10-13 and one or more bath stabilizing agents having at least one pKa in the range of 10-13 to maintain this pH during use; (b) optionally, about 0.01% to about 5% by weight (expressed as SiO2) of a water-soluble metal ion-free silicate; (c) optionally, about 0.01% to about 10% by weight of one or more chelating agents; (d) optionally, about 0.01% to about 80% by weight of one or more water-soluble organic co-solvents; and (e) optionally, about 0.01% to about 1% by weight of a water-soluble surfactant.

L'invention concerne des compositions alcalines aqueuses utiles dans l'industrie micro-électronique pour le lavage ou le nettoyage de substrats de tranches semi-conductrices dans lequel elles permettent d'éliminer des résidus de photorésines et d'autres contaminants indésirables. Les compositions contiennent généralement (a) une ou plusieurs bases sans ion métallique en quantité suffisante pour produire un pH entre 10 et 13 environ et un ou plusieurs agents de stabilisation de bain possédant au moins un pKa compris dans l'intervalle 10-13 afin de pouvoir maintenir ce pH durant l'utilisation, (b) éventuellement 0,01 % environ à 5 % en poids environ (exprimé en SiO2) d'un silicate hydrosoluble ne contenant pas d'ion métallique, (c) éventuellement 0,01 % environ à 10 % en poids environ d'un ou de plusieurs agents de chélation, (d) éventuellement 0,01 % environ à 80 % en poids environ d'un ou de plusieurs co-solvants organiques hydrosolubles, et (e) éventuellement 0,01 % environ à 1 % en poids environ d'un agent tensioactif hydrosoluble.

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