C - Chemistry – Metallurgy – 11 – D
Patent
C - Chemistry, Metallurgy
11
D
C11D 3/00 (2006.01) C11D 7/08 (2006.01) C11D 7/10 (2006.01) C11D 7/32 (2006.01) C11D 7/36 (2006.01) C11D 7/50 (2006.01) C11D 11/00 (2006.01) G03F 7/42 (2006.01)
Patent
CA 2753435
A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point > 65° C, at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.
L'invention porte sur une composition d'élimination d'un photorésist à implantation ionique à dosage élevé à partir de la surface d'un dispositif à semi-conducteurs, la composition ayant au moins un solvant ayant un point d'éclair > 65°C, au moins un composant fournissant un ion nitronium, et au moins un composé inhibiteur de corrosion acide phosphonique. L'invention porte également sur l'utilisation d'une telle composition pour éliminer un photorésist à implantation ionique à dosage élevé à partir de la surface d'un dispositif à semi-conducteurs.
Avantor Performance Materials Inc.
Osler Hoskin & Harcourt Llp
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