Substrate for superconducting device

H - Electricity – 01 – L

Patent

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Details

H01L 39/12 (2006.01) H01L 23/532 (2006.01) H01L 39/22 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2047020

A novel composite comprising a silicon substrate (1) and a plurality of layers of a first oxide superconductor layer (3), a dielectric material layer (4), a second oxide superconductor layer (5), a second dielectric material layer (6) and a third oxide superconductor layer (7) deposited directly or through a buffer layer (2) in this order on the silicon substrate. The composite is used for fabricating superconducting devices such as Josephson element, SQUID and microwave devices.

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