Substrate, substrate with thin film, semiconductor device,...

Details Substrate, substrate with thin film, semiconductor device,... Substrate, substrate with thin film, semiconductor device,...

C - Chemistry, Metallurgy

30

B

C30B 29/36 (2006.01) C23C 16/32 (2006.01) C23C 16/42 (2006.01) C30B 25/20 (2006.01) H01L 21/02 (2006.01) H01L 21/205 (2006.01) H01L 21/329 (2006.01) H01L 21/336 (2006.01) H01L 21/337 (2006.01) H01L 21/338 (2006.01) H01L 29/12 (2006.01) H01L 29/47 (2006.01) H01L 29/78 (2006.01) H01L 29/80 (2006.01) H01L 29/808 (2006.01) H01L 29/812 (2006.01) H01L 29/861 (2006.01) H01L 29/872 (2006.01)

Patent

CA 2747776

Provided are a substrate which suppresses deterioration of processing accuracy of a semiconductor device due to the warping of the substrate, a substrate provided with a thin film, a semiconductor device formed using the abovementioned substrate, and a method for manufacturing said semiconductor device. In the substrate (1), the diameter of the main surface (1a) is 2 inches or more, the bow value of the main surface (1a) is -40 µm to -5 µm, and the warp value of the main surface (1a) is 5 µm to 40 µm. The value of the surface roughness (Ra) of the main surface (1a) of the substrate (1) is preferably 1 nm or less and the value of the surface roughness (Ra) of the main surface (1b) is preferably 100 nm or less.

L'invention porte sur un substrat qui permet de diminuer la détérioration de la précision de traitement d'un dispositif semi-conducteur due au gauchissement d'un substrat ; sur un dispositif semi-conducteur formé à l'aide d'un substrat doté d'un film mince et du substrat mentionné ci-dessus ; et sur un procédé de fabrication d'un tel dispositif semi-conducteur. Dans le substrat (1), le diamètre de la surface principale (1a) est de 2 pouces ou plus, la valeur de courbure de la surface principale (1a) est de -40 µm to -5 µm, et la valeur de gauchissement de la surface principale (1a) est de 5 µm to 40 µm. La valeur de la rugosité de surface (Ra) de la surface principale (1a) du substrat (1) est, de préférence, de 1 nm ou moins, et la valeur de la rugosité de surface (Ra) de la surface principale (1b) est, de préférence, de 100 nm ou moins.

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