System and method for crystal growing

C - Chemistry – Metallurgy – 30 – B

Patent

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C30B 35/00 (2006.01) C30B 17/00 (2006.01)

Patent

CA 2620293

To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.

Afin de réduire l'apport de chaleur sur le fond d'un creuset et régler l'extraction de chaleur indépendamment de l'apport de chaleur, on installe un écran entre un élément chauffant et le creuset, à une vitesse contrôlée pendant la croissance du cristal. Il serait possible de déplacer le creuset, mais le procédé de l'invention permet d'éviter un tel déplacement. On produit un gradient de température en utilisant l'écran pour protéger une partie de l'élément chauffant; par exemple, le fond d'un élément cylindrique peut être protégé afin que le transfert de chaleur soit moindre dans le fond du creuset que dans sa partie supérieure, ce qui permet d'obtenir un gradient de température stabilisateur dans le creuset.

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