Ternary compound film and manufacturing method therefor

Details Ternary compound film and manufacturing method therefor Ternary compound film and manufacturing method therefor

H - Electricity

05

B

H05B 33/00 (2006.01) C09K 11/62 (2006.01) C09K 11/77 (2006.01) C23C 14/06 (2006.01) C23C 14/08 (2006.01) C30B 23/02 (2006.01) H01L 21/20 (2006.01) H01L 21/203 (2006.01) H01L 21/363 (2006.01) H01L 21/365 (2006.01) H01L 29/26 (2006.01) H05B 33/10 (2006.01) H05B 33/14 (2006.01) H05B 33/22 (2006.01)

Patent

CA 2171020

One kind of element belonging to I group or II group and one kind of binary compound including one kind of element belonging to III group and one kind of element selected from the group consisting of S, Se, Te and O are evaporated respectively by means of a vacuum vapor deposition method or molecular beam epitaxial method to produce a ternary compound semiconductor material having a low vapor pressure, and the thus produced ternary compound semiconductor material is deposited on a substrate to form a ternary compound semiconductor thin film. Particularly, when a phosphor thin film for electroluminescence emitting blue light is to be grown, an element Sr and a binary compound Ga2S3 are respectively evaporated by the vacuum evaporation method or molecular beam epitaxial method to deposit a ternary compound semiconductor material SrGa2S4 on a substrate, and at the same time impurity element Ce forming luminescent center is evaporated such that the ternary compound semiconductor material SrGa2S4 is doped with the impurity element.

On produit une couche mince semi-conductrice formée d'un composé ternaire par évaporation d'un type d'élément du groupe I ou II et d'un type de composé binaire que l'on prépare en combinant un type d'élément du groupe III et un élément sélectionné parmi S, Se, Te et O par évaporation sous vide ou croissance épitaxiale à faisceau moléculaire et en déposant sur un substrat un semi-conducteur formé d'un composé ternaire obtenu par évaporation et possédant une faible pression de vapeur. Afin d'obtenir une couche mince en une matière fluorescente émettant de la lumière bleue par électroluminescence, on dépose sur un substrat un semi-conducteur formé d'un composé ternaire SrGa¿2?S¿4? par évaporation du Sr, et un composé binaire Ga¿2?S¿3? par évaporation sous vide ou croissance épitaxiale à faisceau moléculaire, et le semi-conducteur formé d'un composé ternaire SrGa¿2?S¿4? est dopé avec un élément d'impureté, Ce, qui agit comme centre de luminescence.

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