Thin film deposition method and resulting product

C - Chemistry – Metallurgy – 03 – C

Patent

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Details

C03C 17/36 (2006.01) C03C 23/00 (2006.01)

Patent

CA 2762319

The invention relates to a method for obtaining a substrate coated on at least one face thereof with a low-emittance stack of thin films, said method comprising the following steps consisting in: depositing on at least one face of the substrate a stack of thin films including at least one thin silver film between two thin dielectric films; and heat treating the at least one coated face with at least one laser radiation emitted at at least one wavelength of between 500 and 2000 nm, such that the emissivity and/or square resistance of the stack is reduced by at least 5 %. According to the invention, prior to treatment, the stack includes at least one thin film that at least partially absorbs laser radiation and, consequently, the absorption of the stack at at least one laser radiation wavelength is such that the absorption of a 4 mm-thick clear glass substrate coated with this stack at the at least one laser radiation wavelength is greater than or equal to 10 %.

L'invention a pour objet un procédé d'obtention d'un substrat revêtu sur au moins une face d'un empilement de couches minces bas-émissif comprenant les étapes suivantes: -on dépose sur ladite au moins une face dudit substrat un empilement de couches minces comprenant au moins une couche mince d'argent entre au moins deux couches minces diélectriques, -on traite thermiquement la au moins une face revêtue à l'aide d'au moins un rayonnement laser émettant dans au moins une longueur d'onde comprise entre 500 et 2000 nm de sorte que l'émissivité et/ou la résistance carrée de l'empilement est diminuée d'au moins 5%, ledit procédé étant tel que ledit empilement avant traitement comprend au moins une couche mince absorbant au moins partiellement le rayonnement laser de sorte que l'absorption dudit empilementà au moins une longueur d'onde du rayonnement laser est telle que l'absorption d'un substrat de verre clair de 4mm d'épaisseurrevêtu dudit empilement à ladite au moins une longueur d'onde du rayonnement laser est supérieure ou égale à 10%.

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