C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
C03C 17/36 (2006.01) G02B 1/10 (2006.01)
Patent
CA 2189430
Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 .ANG. to 150 .ANG. in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.
Articles transparents composés d'un substrat transparent non métallique revêtu d'un empilement de couches transparentes déposées par pulvérisation cathodique. L'empilement comporte au moins une couche métallique réfléchissant l'infrarouge, une couche d'un diélectrique déposée sur la couche métallique et une couche protectrice de nitrure de silicium de 10 .ANG. à 150 .ANG. d'épaisseur déposée sur la couche diélectrique. Cette dernière présente de préférence le même indice de réfraction que le nitrure de silicium.
Bond Robert
Hoffman Wayne
Stanek Roger P.
Cardinal Cg Company
Cardinal Ig Company
Sim & Mcburney
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