C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
C01B 31/06 (2006.01) C30B 25/00 (2006.01) C30B 29/04 (2006.01)
Patent
CA 2589299
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2.The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2.The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
L'invention porte sur un diamant monocristallin que l'on obtient par dépôt chimique en phase vapeur assisté par plasma micro-ondes, lequel diamant possède une dureté d'au moins 30 MPa m1/2. L'invention se rapporte également à un procédé de production d'un diamant monocristallin d'une dureté d'au moins 30 MPa m1/2. L'invention concerne aussi un procédé permettant de produire un diamant monocristallin CVD dans trois dimensions sur un substrat de diamant monocristallin.
Hemley Russell J.
Mao Ho-Kwang
Yan Chih-Shiue
Carnegie Institution Of Washington
Gowan Intellectual Property
LandOfFree
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