Vapor deposition method for the gaas thin film

Details Vapor deposition method for the gaas thin film Vapor deposition method for the gaas thin film

C - Chemistry, Metallurgy

23

C

117/85, 148/2.1

C23C 16/30 (2006.01) C30B 25/02 (2006.01) C30B 29/42 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1274429

ABSTRACT OF THE DISCLOSURE A vapor phase deposition method for GaAs thin films is disclosed which is an improvement in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are decomposed thermally and GaAs crystals are allowed to deposit onto the GaAs substrate. For the deposition of n-type conductive GaAs crystals, arsine gas and organic gallium gas are supplied at a ratio (V/III) so that p-type conductive GaAs crystals would be deposited in the absence of an impurity and a gas of a compound of a Group VI element is added to these gases to make n-type conductive GaAs crystals having a carrier density of not less than 1 x 1016 cm-3.

509282

Affiliated with

Also associated with

Rating

Vapor deposition method for the gaas thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor deposition method for the gaas thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor deposition method for the gaas thin film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1192424