Method and apparatus for plasma-assisted deposition of thin...

B - Operations – Transporting – 05 – D

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204/96.3

B05D 3/06 (2006.01) C23C 14/32 (2006.01) H01J 37/305 (2006.01) H01J 37/32 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1242165

ABSTRACT An improved method of and apparatus for depositing thin films, such as indium tin oxide, on substrates. The method includes electron beam vaporization of a solid material source and radio frequency plasma ionization of the evaporated material and of at least one reactant gas that is separately supplied. By passing the vaporized solid material and reactant gas through the plasma, they are ionized and react to form the desired compound prior to its deposition.

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