C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/81, 148/2.1,
C23C 14/34 (2006.01) H01L 39/24 (2006.01)
Patent
CA 1337719
In a process for depositing superconducting thin film of bismuth- containing compound oxide on a substrate by physical vapour deposition, improvement in that the substrate is heated at a temperature between 670 and 750°C during the deposition.
609633
Fujimori Naoji
Harada Keizo
Higaki Kenjiro
Itozaki Hideo
Yazu Shuji
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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