Group iii nitride semiconductor device and epitaxial substrate

Details Group iii nitride semiconductor device and epitaxial substrate Group iii nitride semiconductor device and epitaxial substrate

H - Electricity

01

L

H01L 29/47 (2006.01) H01L 29/872 (2006.01)

Patent

CA 2572792

A Group III nitride semiconductor device having a structure capable of enhancing of pressure tightness. Schottky diode (11) comprises Group III nitride supporting base material (13), gallium nitride region (15) and Schottky electrode (17). The Group III nitride supporting base material (13) has conductivity. The Schottky electrode (17) forms Schottky junction in the gallium nitride region (15). The gallium nitride region (15) is superimposed on the major surface (13a) of the Group III nitride supporting base material (13). The gallium nitride region (15) has a (10-12) plane XRD full width at half maximum of <= 100 sec.

Dispositif semi-conducteur en nitrures du groupe III présentant une structure capable d'améliorer la résistance à la pression. La diode de Schottky (11) selon l~invention comprend un matériau de base de support de nitrures du groupe III (13), une zone de nitrure de gallium (15) et une électrode de Schottky (17). Le matériau de base de support de nitrures du groupe III (13) présente une certaine conductivité. L~électrode de Schottky (17) forme une jonction de Schottky dans la zone de nitrure de gallium (15). La zone de nitrure de gallium (15) est superposée sur la surface majeure (13a) du matériau de base de support des nitrures du groupe III (13). La zone de nitrure de gallium (15) présente un plan (10-12) XRD en pleine largeur à mi-hauteur de <= 100 sec.

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