C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
C03C 17/09 (2006.01) C03C 17/245 (2006.01) C03C 17/36 (2006.01) C03C 23/00 (2006.01)
Patent
CA 2674085
The invention relates to a method for processing at least one continuous thin layer deposited on the first surface of a substrate, characterised in that said at least one thin layer is heated at a temperature of at least 300°C while maintaining a temperature lower than or equal to 150°C at the surface of said substrate opposite said first surface in order to increase the crystallisation rate of said thin layer while maintaining it continuous and without any fusion step of said thin layer. The invention also relates to a material that can be obtained using said method.
L'invention a pour objet un procédé de traitement d'au moins une couche mince continue déposée sur une première face d'un substrat,caractérisé en ce que l'on porte ladite au moins une couche mince à une température d'au moins 300 °C en maintenant une température inférieure ou égale à 150 °C au niveau de la face dudit substrat opposée à ladite première face, de manière à augmenter le taux de cristallisation de ladite couche mince en la conservant continue et sans étape de fusion de ladite couche mince. L'invention a également pour objet le matériau susceptible d'être obtenu par ce procédé.
Billert Ulrich
Gy Rene
Kharchenko Andriy
Nadaud Nicolas
Goudreau Gage Dubuc
Saint-Gobain Glass France
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