C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 14/35 (2006.01) C23C 14/08 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2045267
A process for preparing a thin film of high-temperature compound oxide superconductor on a substrate by magnetron sputtering method. A substrate and a target are arranged in parallel with each other in a vacuum chamber and one of the substrate and the target is moved relatively and in parallel with another during the thin film is formed by sputtering.
Cette invention concerne un procédé de dépôt d'une couche mince d'oxyde supraconductrice haute température sur un substrat par la technique de pulvérisation magnétron. Un substrat et une cible sont disposés parallèlement l'un à l'autre dans une chambre sous vide et l'un des deux est déplacé par rapport à l'autre tout en conservant le parallélisme pendant le dépôt de la couche mince par pulvérisation.
Harada Keizo
Hattori Hsiao
Higaki Kenjiro
Itozaki Hideo
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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