Semi-insulating nitride semiconductor substrate and method...

Details Semi-insulating nitride semiconductor substrate and method... Semi-insulating nitride semiconductor substrate and method...

H - Electricity

01

L

H01L 21/18 (2006.01) H01L 29/20 (2006.01) H01L 29/772 (2006.01)

Patent

CA 2641016

A method of manufacturing a semi-insulating nitride semiconductor substrate includes the steps of forming on an underlying substrate, a mask in which dotted or striped coating portions having a width or a diameter Ds from 10µm to 100µm are arranged at an interval Dw from 250µm to 2000µm, growing a nitride semiconductor crystal on the underlying substrate with an HVPE method at a growth temperature from 1040°C to 1150°C by supplying a group III raw material gas and a group V raw material gas of which group V/group III ratio R5/3 is set to 1 to 10 and a gas containing iron, and removing the underlying substrate, to thereby obtain a free-standing semi-insulating nitride semiconductor substrate having a specific resistance not smaller than 1 × 10 5.OMEGA.2cm and a thickness not smaller than 100µm. Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.

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