Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/336 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2682834

Disclosed is a method for manufacturing a semiconductor device, which comprises a step for forming an SiC film, a step for forming a trench (20) in the surface of the SiC film, a heat treatment step for heating the SiC film while supplying Si to the surface of the SiC film, and a step for forming a plurality of macrosteps (1), which are obtained in the surface of the SiC film by the heat treatment step, into channels. When the period of the trench (20) is represented by L and the height of the trench (20) is represented by h, the period L and the height h satisfy the following relation: L = h(cot.alpha. + cot.beta.) (wherein .alpha. and .beta. are respectively a variable satisfying 0.5 <= .alpha. and .beta. <= 45). This method enables to obtain a semiconductor device having improved characteristics.

L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteur qui consiste à former un film de SiC, à former une tranchée (20) dans la surface du film de SiC, à traiter thermiquement, pour le chauffer, le film du SiC tout en fournissant du Si à la surface du film de SiC, et à former une pluralité de macro-étages (1), qui sont obtenus dans la surface du film de SiC par l'étape de traitement thermique, en canaux. Lorsque la période de la tranchée (20) est représentée par L et que la hauteur de la tranchée (20) est représentée par h, la période L et la hauteur h satisfont la relation suivante : L = h(cot.alpha. + cot.beta.) (dans laquelle .alpha. et .beta. sont respectivement une variable satisfaisant 0,5 <= .alpha. et .beta. <= 45). Ce procédé permet d'obtenir un dispositif à semi-conducteur ayant des caractéristiques améliorées.

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