Process for preparing thin film of oxide superconductor

Details Process for preparing thin film of oxide superconductor Process for preparing thin film of oxide superconductor

C - Chemistry, Metallurgy

23

C

C23C 14/08 (2006.01) C23C 14/34 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2045890

A process for preparing a thin film of oxide superconductor on a single crystal substrate of semiconductor by physical vapour deposition. At first, an under-layer of an oxide having a thickness of 50 to 200 .ANG. is deposited on the single crystal substrate of semiconductor at a substrate temperature of lower than 500 °C, and secondly an upper-layer of superconducting oxide material is deposited on said under-layer at a substrate temperature of higher than 600°C.

Cette invention concerne le dépôt physique en phase vapeur d'un oxyde supraconducteur en couche mince sur un substrat semiconducteur monocristallin. En premier, une sous-couche d'oxyde ayant une épaisseur comprise entre 50 et 200 est déposée sur un substrat semiconducteur monocristallin porté à une température inférieure à 500 degrés Celsius. En deuxième lieu, une autre couche d'oxyde supraconducteur est déposée sur la première couche, la température du substrat étant portée à plus de 600 degrés Celsius.

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