N-type semiconductor diamond producing method and...

C - Chemistry – Metallurgy – 30 – B

Patent

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C30B 29/04 (2006.01) C30B 25/02 (2006.01) H01L 21/04 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2493318

An n-type semiconductor diamond producing method, an n-type semiconductor diamond, pn-junction semiconductor diamond, a pnp-junction semiconductor diamond, an npn-junction semiconductor diamond, and a pin-junction are provided. A diamond {100} single-crystal substrate (10) is processed to form a diamond {111} surface. A diamond is epitaxially grown while the diamond {111} surface is being doped with an n-type dopant to form an n-type diamond epitaxial layer (20). Combining a thus produced n-type semiconductor diamond, a p-type semiconductor diamond, and a non-doped diamond, and using a p-type semiconductor diamond {100} single-crystal substrate, a pn-junction semiconductor diamond, a pnp-junction semiconductor diamond, an npn-junction semiconductor diamond, and a pin-junction semiconductor diamond are produced.

L'invention concerne un procédé de production de diamant semi-conducteur de type N, un diamant semi-conducteur de type N, un diamant semi-conducteur à jonction pn, un diamant semi-conducteur à jonction pnp, un diamant semi-conducteur à jonction npn et une jonction pin. L'invention concerne un substrat (10) de diamant {100} monocristallin qui est traité de façon à former une surface de diamant {111}. Un diamant est développé de manière épitaxiale, tandis que la surface de diamant {111} est en cours de dopage au moyen d'un dopant de type N pour former une couche (20) épitaxiale de diamant de type N. En combinant un diamant semi-conducteur de type N ainsi produit avec un diamant semi-conducteur de type p, et un diamant non dopé, et en utilisant un substrat de diamant semi-conducteur {100} monocristallin, on produit un diamant semi-conducteur à jonction pnp, un diamant semi-conducteur à jonction npn et un diamant semi-conducteur à jonction pin.

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