Wide bandgap transistor devices with field plates

Details Wide bandgap transistor devices with field plates Wide bandgap transistor devices with field plates

H - Electricity

01

L

H01L 29/778 (2006.01) H01L 29/06 (2006.01) H01L 29/423 (2006.01) H01L 29/812 (2006.01)

Patent

CA 2536030

A transistor structure comprising an active semiconductor layer with metal source and drain contacts (20, 22) formed in electrical contact with the active layer. A gate contact (26) is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer (24) is formed above the active layer and a conductive field plate (28) formed above the spacer layer, extending, a distance Lf from the edge of the gate contact toward the drain contact. The field plate is electrically connected to the gate contact.

L'invention concerne une structure transistor comprenant une couche semi-conductrice active à contacts drain et source métalliques (20, 22) formés en contact électrique avec la couche active. Un contact de grille (26) est formé entre les contacts source et drain, ce qui permet de moduler des champs électriques à l'intérieur de la couche active. Une couche espaceur (24) est formée sur la couche active et une plaque à champ conducteur (28) est formée sur la couche espaceur, s'étendant d'une distance L¿f? du bord du contact de grille vers le contact drain. La plaque de champ est reliée électriquement au contact de grille.

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