H - Electricity – 01 – L
Inventor
H - Electricity
01
L
Inventor
Country: United States Of America
Fabrication of single or multiple gate field plates
Gallium nitride based diodes with low forward voltage and...
Group iii nitride based flip-chip integrated circuit and...
High efficiency and/or high power density wide bandgap...
Insulating gate algan/gan hemt
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Profile ID: LFCA-PAI-P-1433859