High efficiency and/or high power density wide bandgap...

Details High efficiency and/or high power density wide bandgap... High efficiency and/or high power density wide bandgap...

H - Electricity

01

L

H01L 29/778 (2006.01) H01L 29/40 (2006.01)

Patent

CA 2644660

Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power density of at least 5 W/mm when operated at 10 GHz at drain biases from 28 V to 48 V are also provided.

On décrit des transistors à effet de champ ayant une densité de puissance plus grande que 40 W/mm lorsqu'ils fonctionnent à une fréquence d'au moins 4 GHz. La densité de puissance d'au moins 40 W/mm peut être fournie à une tension de drain de 135 V. On décrit aussi des transistors ayant un rendement en puissance ajoutée (PAE) supérieur à 60 % et une densité de puissance d'au moins 5 W/mm lorsqu'ils fonctionnent à 10 GHz et des tensions de polarisation du drain de 28 V à 48 V.

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