H - Electricity – 01 – L
Inventor
H - Electricity
01
L
Inventor
Country: United States Of America
Gallium nitride based diodes with low forward voltage and...
Group-iii nitride based high electron mobility transistor...
High efficiency and/or high power density wide bandgap...
Insulating gate algan/gan hemt
Method for fabricating group iii nitride devices and devices...
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Profile ID: LFCA-PAI-P-1392831