Method and device for determining backgate characteristics

Details Method and device for determining backgate characteristics Method and device for determining backgate characteristics

H - Electricity

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L

H01L 21/66 (2006.01) G01N 27/22 (2006.01) G01R 31/26 (2006.01) G01N 33/00 (2006.01)

Patent

CA 2419482

Backgate-characteristics determination method and device that make for curtailing the fabrication of semiconductor circuit elements having defective backgate-characteristics. Initially a first C-V curve 30 representing the relation between a voltage applied to the obverse face of a wafer 20 serving as a substrate for semiconductor circuit elements, and its capacitance, is found. Next, a second C-V curve 32 is found through applying a voltage to the reverse face of the wafer 20. The backgate characteristics for the semiconductor circuit elements are determined based on a voltage-shift amount 34 for the wafer 20, found from the first C-V curve 30 and the second C-V curve 32.

Dispositif et méthode de détermination des caractéristiques de substrat permettant de limiter la fabrication d'éléments de circuits semi-conducteurs dont les caractéristiques de substrat sont défectueuses. D'abord, une première courbe de tension capacitive (C-V) (30) représentant la relation entre une tension appliquée à la surface avers d'une tranche (20) qui sert de substrat pour des éléments de circuits semiconducteurs, et sa capacité, est déterminée. Ensuite, une seconde courbe C-V (32() est déterminée en appliquant une tension à la surface verso de la même tranche (20). Les caractéristiques de substrat pour les éléments des circuits semi-conducteurs sont déterminées sur la base d'une valeur de décalage de la tension (34) pour la tranche (20), déduite de la première courbe C-V (30) et de la seconde C-V (32).

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