Ferroelectric thin films of reduced tetragonality

Details Ferroelectric thin films of reduced tetragonality Ferroelectric thin films of reduced tetragonality

H - Electricity

01

L

H01L 29/76 (2006.01) H01L 21/316 (2006.01) H01L 27/115 (2006.01) H01L 29/51 (2006.01) H01L 29/94 (2006.01) H01L 31/062 (2006.01) H01L 31/113 (2006.01) H01L 31/119 (2006.01) H01L 21/02 (2006.01)

Patent

CA 2343129

A ferroelectric material, especially as incorporated into a crystallographically oriented epitaxial ferroelectric cell, of Pb1-xLaxZryTi1- yO3 or Pb1-xNbxZryTi1-yO3 having a moderately high La or Nb content such that the unit cell is less tetragonal, that is, more nearly cubic, so as to reduce stress effects. A most preferred value of the c/a constant is about 1.01. Exemplary compositional ranges for x are 6 to 20 % for La and 3 to 15 % for Nb, when y is 20 %. The reduced polarizabilities voltages are consistent with integrated ferrroelectric memories operating at 3.0V and lower.

La présente invention concerne un matériau ferroélectrique, en particulier lorsqu'il est incorporé dans une cellule ferroélectrique épitaxiale à axe cristallographique, de Pb¿l-x?La¿x?Zr¿y?Ti¿1-y?O¿3? ou Pb¿1-x?Nb¿x?Zr¿y?Ti¿1-y?O¿3?, présentant une teneur modérément élevée en La ou Nb, telle que ladite unité est moins <= tétragonale >= c'est-à-dire de forme davantage cubique, de manière à atténuer les effets de contrainte. Idéalement, la valeur de la constante c/a est d'environ 1,01. Lorsque y est de 20 %, les valeurs pour x sont comprises entre 6 et 20 % pour La et 3 et 15 % pour Nb. Les tensions à polarisabilité réduite conviennent pour des mémoires ferroélectriques intégrées fonctionnant sous 3,0 volts ou moins.

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