Dopant pastes for the production of p,p+ and n,n+ regions in...

Details Dopant pastes for the production of p,p+ and n,n+ regions in... Dopant pastes for the production of p,p+ and n,n+ regions in...

H - Electricity

01

L

H01L 31/068 (2006.01) H01L 21/033 (2006.01) H01L 21/22 (2006.01) H01L 21/312 (2006.01) H01L 21/316 (2006.01) H01L 31/0288 (2006.01)

Patent

CA 2367137

The invention relates to novel doting pastes on the basis of boron, phosphorous or boron-aluminum for producing p, p+ and n, n+ zones in monocrystalline and polycrystalline Si wafers. The invention further relates to the use of corresponding pastes as masking pastes in the production of semiconductors, in power electronics or in photovoltaic applications.

Cette invention concerne de nouvelles pâtes de dopage à base de bore, de phosphore ou de bore-aluminium destinées à la production de zones p, p+ et n, n+ dans des tranches de silicium monocristallin et polycristallin et à la production de pâtes correspondantes utilisées en tant que pâtes de masquage dans la fabrication de semiconducteurs, utilisées dans l'électronique de puissance ou dans des applications utilisant l'effet photovoltaïque.

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