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Thomas Gehrke

H - Electricity – 01 – L

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Country: United States Of America

Fabrication of gallium nitride layers by lateral growth

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Fabrication of gallium nitride semiconductor layers by...

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Pendeoepitaxial gallium nitride layers grown on weak posts

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Pendeoepitaxial growth of gallium nitride layers on sapphire...

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Profile ID: LFCA-PAI-P-1621198

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