Fabrication and use of submicron wide suspended structures

Details Fabrication and use of submicron wide suspended structures Fabrication and use of submicron wide suspended structures

B - Operations, Transporting

81

C

B81C 1/00 (2006.01) G01N 5/02 (2006.01) G01N 33/483 (2006.01)

Patent

CA 2640501

A method of fabrication of submicron wide suspended structures. The method includes depositing a layer of glassy material under tensile stress on crystalline silicon, patterning the layer of glassy material with a masking layer having a pattern, the masking layer protecting the layer of glassy material along the pattern, selectively removing the layer of glassy material in areas of the layer of glassy material not protected by the masking layer; and anisotropically etching the crystalline silicon to create at least a pit extending into the crystalline silicon and at least partially under the layer of glassy material to release a suspended structure comprising glassy material.

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