Dissipation of a charge buildup on a wafer portion

Details Dissipation of a charge buildup on a wafer portion Dissipation of a charge buildup on a wafer portion

B - Operations, Transporting

81

C

B81C 1/00 (2006.01) B81B 1/00 (2006.01) H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/8238 (2006.01) H05F 3/00 (2006.01)

Patent

CA 2497933

An apparatus in one example comprises a wafer portion that comprises a conduction layer. Upon exposure of the conduction layer during a etch of the wafer portion, the conduction layer serves to dissipate a portion of a charge buildup on the wafer portion during an etch of the wafer portion.

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