Electrode for use in plasma etching

Details Electrode for use in plasma etching Electrode for use in plasma etching

H - Electricity

05

H

H05H 1/34 (2006.01) H01J 37/32 (2006.01)

Patent

CA 2110414

Abstract of the Disclosure The present invention provides an electrode for use in plasma etching, composed of a silicon single crystal or a silicon single crystal having a large number of small through-holes. The electrode of the present invention is substantially free from structural destruction, resultantly has a long life, and causes no staining of wafer surface owing to structural destruction. Further, when the electrode has an appropriate number of small through-holes, a reactant gas can flow into a plasma smoothly and enables more efficient plasma etching.

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