High voltage, high temperature capacitor structures and...

H - Electricity – 01 – G

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H01G 4/018 (2006.01) H01G 4/10 (2006.01) H01L 21/02 (2006.01) H01L 21/04 (2006.01) H01L 27/00 (2006.01) H01L 27/08 (2006.01) H01L 29/51 (2006.01) H01L 29/94 (2006.01) H01L 29/24 (2006.01)

Patent

CA 2448006

Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.

L'invention concerne des structures de condensateurs et des structures d'interconnexion en carbure de silicium, comportant une couche d'oxyde, une couche de matériau diélectrique et une seconde couche d'oxyde appliquée sur la couche de matériau diélectrique. L'épaisseur des couches oxydes peut être comprise entre environ 0,5 et environ 33 % de l'épaisseur des couches oxydes et de la couche du matériau diélectrique. L'invention concerne en outre des structures de condensateurs et des structures d'interconnexion en carbure de silicium comportant une couche d'oxynitride de silicium comme structure diélectrique. Cette structure diélectrique peut être disposée entre des couches métalliques pour former un condensateur métal-isolant-métal, ou utilisée comme diélectrique intermétallique d'une structure d'interconnexion pour obtenir des dispositifs et des structures possédant une moyenne des temps de bon fonctionnement améliorée. L'invention concerne enfin des procédés de fabrication de ces condensateurs et structures.

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