4. H - Electricity
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Mrinal Kanti Das

H - Electricity – 01 – L

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Country: United States Of America

High voltage, high temperature capacitor structures and...

H - Electricity – 01 – G
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Method of fabricating an oxide layer on a silicon carbide...

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Method of fabricating an oxide layer on a silicon carbide...

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Nitrogen passivation of interface states in sio2/sic structures

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Silicon carbide devices and fabricating methods therefor

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Profile ID: LFCA-PAI-P-1288153

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