Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

H - Electricity

01

L

H01L 29/739 (2006.01) H01L 21/02 (2006.01) H01L 21/20 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2761246

Disclosed is an IGBT (100) which is a vertical IGBT wherein on-resistance is reduced, while suppressing generation of defects. The IGBT is provided with a silicon carbide substrate (1), a drift layer (3), a well region (4), an n+ region (5), an emitter contact electrode (92), a gate oxide film (91), a gate electrode (93), and a collector electrode (96). The silicon carbide substrate (1) includes a base layer (10), which is composed of silicon carbide and has p-type conductivity, and a SiC layer (20), which is composed of single crystal silicon carbide and is disposed on the base layer (10). The p-type impurity concentration of the base layer (10) exceeds 1×1018 cm-3.

La présente invention concerne un IGBT (100) qui est un IGBT vertical dont la résistance à l'état passant est réduite en éliminant la production de défauts. L'IGBT comporte un substrat de carbure de silicium (1), une couche flottante (3), une région de puits (4), une région n (5), une électrode de contact émettrice (92), un film d'oxyde de grille (91), une électrode de grille (93), et une électrode collectrice (96). Le substrat de carbure de silicium (1) comprend une couche de base (10), qui est composée de carbure de silicium et a une conductivité de type p, et une couche SiC (20), qui est composée de carbure de silicium à un seul cristal et est disposée sur la couche de base (10). La concentration en impuretés de type p de la couche de base (10) dépasse 1×1018 cm-3.

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