Integrated electrical cross-talk walls for electrostatic mems

Details Integrated electrical cross-talk walls for electrostatic mems Integrated electrical cross-talk walls for electrostatic mems

B - Operations, Transporting

81

C

B81C 1/00 (2006.01) B81B 5/00 (2006.01) B81B 7/02 (2006.01)

Patent

CA 2638477

To reduce cross-talk between adjacent hot electrodes, the present invention provides a ground plane, which extends beneath each side of a MEMS mirror platform covering opposite edges of a hot electrode along each side thereof. The ground plane includes an overhang section extending between the mirror platform and the hot electrode forming a first gap between the hot electrode and the overhang section, and a second gap between the overhang section and the mirror platform. The method of the present invention enables highly accurate construction using lithographic patterning and deep reactive ion etching (DRIE).

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