Metal mems devices and methods of making same

Details Metal mems devices and methods of making same Metal mems devices and methods of making same

B - Operations, Transporting

81

B

B81B 7/02 (2006.01) B81C 1/00 (2006.01)

Patent

CA 2522606

Metal MEMS structures are fabricated from metal substrates, preferably titanium, utilizing micromachining processes with a new deep etching procedure to provide released microelectromechanical devices. The deep etch procedure includes metal anisotropic reactive ion etching utilizing repetitive alternating steps of etching and side wall protection. Variations in the timing of the etching and protecting steps produces walls of different roughness and taper. The metal wafers can be macomachined before forming the MEMS structures, and the resulting wafers can be stacked and bonded in packages.

L'invention concerne des structures à systèmes mécaniques microélectriques (MEMS) métalliques, de préférence en titane, qui exploitent des procédés de micro-usinage faisant appel à une nouvelle technique de gravure profonde pour produire de meilleurs dispositifs microélectromécaniques. Ladite technique consiste notamment en une gravure ionique réactive anisotrope en étapes alternées répétitives de gravure et de protection de paroi latérale. Les variations au niveau de la synchronisation des étapes de gravure et de protection produisent des parois de rugosité et de conicité différentes. Les plaquettes métalliques peuvent être macro-usinées avant la formation des structures à MEMS, les plaquettes résultantes pouvant être empilées et liées en emballages.

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