Method and system for xenon fluoride etching with enhanced...

Details Method and system for xenon fluoride etching with enhanced... Method and system for xenon fluoride etching with enhanced...

B - Operations, Transporting

81

C

B81C 1/00 (2006.01) B81B 7/02 (2006.01)

Patent

CA 2515622

Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

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