C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
C03C 23/00 (2006.01) B01J 19/08 (2006.01) G02B 1/12 (2006.01)
Patent
CA 2227338
The present invention provides a method for controlling index of refraction of silica glass by which reduction of treating temperature, reduction of treating time, direct patterning without requiring any photolithographic step, and formation ofminute structure can be achieved. The method for controlling index of refraction of silica glass in which vacuum ultraviolet laser beam having the same or shorter wavelength as or than that absorbed by silica glass is irradiated to the aforesaid silica glass to cause photodissociation of Si-O bond in the area of the aforesaid silica glass irradiated by the aforesaid vacuum ultraviolet laser beam.
La présente invention offre une méthode de contrôle de l'indice de réfraction du verre de silice permettant la réduction de la température de traitement, la réduction du temps de traitement, un profilage direct sans recourir à une étape de photolithographie et l'obtention d'une taille d'extrême précision. La méthode de contrôle de l'index de réfraction d'un verre de silice consiste à utiliser le rayonnement d'un rayon laser ultra-violet sous vide de longueur d'onde inférieure ou égale à celle absorbée par le verre de silice afin de causer la rupture des liaisons Si-O dans la région du dit verre de silice irradiée par ledit rayon laser ultra-violet sous vide.
Ruschin Shlomo
Sugioka Koji
Tashiro Hideo
Toyoda Koichi
Wada Satoshi
Stikeman Elliott Llp
The Institute Of Physical And Chemical Research
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