Method for manufacturing silicon carbide substrate and...

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H01L 21/02 (2006.01) H01L 21/28 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2759861

A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate (10) made of silicon carbide and a SiC substrate (20) made of single-crystal silicon carbide; forming a Si film (30) made of silicon on a main surface of the base substrate (10); fabricating a stacked substrate by placing the SiC substrate (20) on and in contact with the Si film (30); and connecting the base substrate (10) and the SiC substrate (20) to each other by heating the stacked substrate to convert, into silicon carbide, at least a region making contact with the base substrate (10) and a region making contact with the SiC substrate (20) in the Si film (30).

La présente invention concerne un procédé de fabrication d'un substrat en carbure de silicone qui comprend : une étape au cours de laquelle un substrat de base (10) qui comprend du carbure de silicone et un substrat en SiC (20) doté d'un carbure en silicone à cristal unique sont préparés ; une étape au cours de laquelle un film de Si (30) qui comprend du silicone est formé sur une surface principale du substrat de base (10) ; une étape au cours de laquelle un substrat stratifié est fabriqué par placement du substrat en SiC (20) sur le film en Si (30) de manière à faire contact avec celui-ci ; et une étape au cours de laquelle le substrat de base (10) et le substrat de SiC (20) sont reliés par chauffage du substrat stratifié, convertissant ainsi au moins la région du film en Si (30) en contact avec le substrat de base (10) et la région au contact du substrat de SiC (20) dans le carbure de silicone.

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