Methods and structure for improving wafer bow control

Details Methods and structure for improving wafer bow control Methods and structure for improving wafer bow control

B - Operations, Transporting

81

B

B81B 3/00 (2006.01)

Patent

CA 2512699

A method for controlling bow in wafers (50) which utilize doped layers is described. The method includes depositing a silicon-germanium layer (52) onto a substrate (14), depositing an undoped buffer layer (56) onto the silicon- germanium layer, and depositing a silicon-boron layer (58) onto the undoped layer.

L'invention concerne un procédé visant à éliminer le gauchissement dans des plaquettes (50) qui utilisent des couches dopées. Le procédé consiste à déposer une couche de silicium-germanium (52) sur un substrat (14), à déposer une couche tampon non dopée (56) sur la couche de silicium-germanium et à déposer une couche de silicium-bore (58) sur la couche non dopée.

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