Methods of forming alpha and beta tantalum films with...

Details Methods of forming alpha and beta tantalum films with... Methods of forming alpha and beta tantalum films with...

B - Operations, Transporting

81

C

B81C 1/00 (2006.01) C23C 14/16 (2006.01) C23C 14/54 (2006.01) C23C 16/06 (2006.01) C30B 23/00 (2006.01) C30B 25/00 (2006.01) C30B 29/02 (2006.01)

Patent

CA 2567032

Thin tantalum films having novel microstructures are provided. The films have microstructures such as nanocrystalline, single crystal and amorphous. These films provide excellent diffusion barrier properties and are useful in microelectronic devices. Methods of forming the films using pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) deposition methods are also provided, as are microelectronic devices incorporating these films.

L'invention concerne des films minces de tantale possédant des nouvelles microstructures. Ces films possèdent des microstructures nanocristallines, monocristallines ou amorphes. Elles présentent d'excellentes propriétés barrières de diffusion et sont utiles dans des dispositifs microélectroniques. Des procédés de formation des couches de l'invention, dans lesquels sont utilisés des procédés de dépôt par laser pulsé (PLD) et de dépôt par épitaxie par faisceaux moléculaires (MBE) sont également décrits, ainsi que des dispositifs microélectroniques comprenant lesdits films.

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