Mosfet and method for manufacturing mosfet

Details Mosfet and method for manufacturing mosfet Mosfet and method for manufacturing mosfet

H - Electricity

01

L

H01L 29/12 (2006.01) H01L 21/336 (2006.01) H01L 29/78 (2006.01)

Patent

CA 2738385

A MOSFET 1 includes a silicon carbide (SiC) substrate (2) having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer (21) formed on the main surface of the SiC substrate (2); and an insulating film (26) formed in contact with a surface of the semiconductor layer (21). When the insulating film (26) has a thickness of not less than 30 nm and not more than 46 nm, the threshold voltage thereof is not more than 2.3V. When the insulating film (26) has a thickness of more than 46 nm and not more than 100 rim, the threshold voltage thereof is more than 2.3 V and not more than 4.9 V.

L'invention concerne un transistor MOS (1) qui comprend : un substrat de carbure de silicium (SiC) (2) dont l'angle d'inclinaison de sa surface principale est non inférieur à 50°, mais n'excède par 65° par rapport au plan {0001}, une couche de semi-conducteurs (21) formée sur la surface principale du substrat SiC (2) et un film isolant (26) formé de manière à être en contact avec la surface de la couche de semi-conducteurs (21). Lorsque l'épaisseur du film isolant (26) n'est pas inférieure à 30 nm, mais n'excède pas plus de 46 nm, la tension de seuil du transistor MOS (1) n'excède pas plus de 2,3 V. Cependant, lorsque l'épaisseur du film isolant (26) est supérieure à 46 nm, mais est inférieure ou égale à 100 nm, la tension de seuil du transistor MOS (1) est supérieure à 2,3 V, mais inférieure ou égale à 4,9 V.

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