Polycrystalline ferroelectric capacitor heterostructure...

H - Electricity – 01 – G

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H01G 7/06 (2006.01)

Patent

CA 2203524

Ferroelectric capacitor heterostructures exhibiting exceptional reliability and resistance to fatigue and imprinting comprise hybrid electrodes of highly conductive platinum (14) with polycrystalline metallic oxide (15) and ferroelectric materials (16) deposited on Si-CMOS-compatible substrates (11) without the requirement for interposed crystallographic orientation templates.

Une hétérostructure de condensateur ferroélectrique d'une très grande fiablité et d'une résistance élevée à la fatigue et aux empreintes comprend des électodes hybrides en platine hautement conducteur (14), obtenues par dépôt de matériaux d'oxyde métallique polycristallin (15) et ferroélectriques (11) sur des substrats de Si compatibles avec les structures CMOS, sans qu'il y ait besoin d'interposer des gabarits d'orientation cristallographique.

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