B - Operations – Transporting – 81 – B
Patent
B - Operations, Transporting
81
B
B81B 7/00 (2006.01) B81C 1/00 (2006.01) H01J 7/18 (2006.01) H01L 23/26 (2006.01)
Patent
CA 2701363
The structure comprises at least one device, for example a microelectronic chip, and at least one getter (6) which are placed in a cavity containing a controlled atmosphere, said cavity being bounded by a substrate (2) and a closure cap. The getter (6) comprises at least one, preferably metallic, getter layer (7) and an adjusting sublayer (8), made of a pure metal, located between the getter layer (7) and the substrate (2), on which it is formed. The adjusting sublayer (8) is capable of modulating the activation temperature of the getter layer (7). The getter layer (7) comprises two elementary getter layers (7a,7b).
La structure comporte au moins un dispositif, par exemple une puce microélectronique, et au moins un getter (6) disposés dans une cavité sous atmosphère contrôlée délimitée par un substrat (2) et un capot de fermeture. Le getter (6) comporte au moins une couche getter (7), de préférence métallique, et une sous-couche d'ajustement (8), en métal pur, située entre la couche getter (7) et le substrat (2), sur lequel il est formé. La sous-couche d'ajustement (8) est apte à moduler la température d'activation de la couche getter (7). La couche getter (7) comporte deux couches getter (7a,7b) élémentaires.
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