Surface acoustic wave device

H - Electricity – 01 – L

Patent

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Details

H01L 41/00 (2006.01) H03H 9/02 (2006.01)

Patent

CA 2197018

A surface acoustic wave device includes at least diamond, a single crystal LiNbO3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO3 layer and uses a surface acoustic wave (wavelength: .lambda.n µm) in an nth-order mode (n = i or 2). When the thickness of the LiNbO3 layer is t1 (µm), kh1 = 2.pi.(t1/ .lambda.n.p ) and the cut orientation (.theta.,.PHI., and .PSI. represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K2) is realized.

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