Wafer bonding device and wafer bonding method

B - Operations – Transporting – 81 – C

Patent

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Details

B81C 1/00 (2006.01) B23K 20/00 (2006.01) H01L 21/64 (2006.01) H01L 21/683 (2006.01)

Patent

CA 2739239

A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.

Le procédé de liaison de plaquette selon linvention comprend une étape consistant à maintenir un premier substrat par un mécanisme de maintien supérieur (7) grâce à lapplication dune tension au mécanisme de maintien supérieur (7) ; une étape consistant à former un substrat lié grâce à la liaison du premier substrat et dun second substrat maintenu par un mécanisme de maintien inférieur (8) ; et une étape consistant à retirer le substrat lié du mécanisme de maintien supérieur (7) après application dune tension, qui atténue tout en alternant, au mécanisme de maintien supérieur (7). La force dattraction résiduelle entre le substrat lié et le mécanisme de maintien supérieur (7) est réduite lorsque la tension, qui atténue tout en alternant, est appliquée au mécanisme de maintien supérieur (7), et le substrat lié peut être retiré du mécanisme de maintien supérieur (7) de façon plus sûre en moins de temps. En conséquence, un appareil de liaison de plaquette (1) peut lier le premier substrat et le second substrat en moins de temps.

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