Wet-tantalum reformation method and apparatus

Details Wet-tantalum reformation method and apparatus Wet-tantalum reformation method and apparatus

H - Electricity

01

G

H01G 9/042 (2006.01) A61N 1/39 (2006.01) H01G 9/048 (2006.01)

Patent

CA 2524896

A method of reforming a wet-tantalum capacitor is disclosed. The method comprises charging the capacitor to a voltage that is substantially less than one of a maximum and rated voltage for the capacitor. The method also comprises providing an open circuit condition and allowing the capacitor to at least partially discharge through leakage current.

L'invention concerne un procédé de reformage d'un condensateur au tantale imprégné. Ledit procédé consiste à charger le condensateur à une tension qui est sensiblement inférieure à une tension maximum et nominale du condensateur. Le procédé consiste également à utiliser une condition de circuit ouvert et à permettre au condensateur de se décharger au moins en partie à travers un courant de fuite.

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