Wide bandgap hemts with source connected field plates

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 29/778 (2006.01) H01L 29/06 (2006.01)

Patent

CA 2566756

A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.

La présente invention concerne un transistor à haute mobilité d'électrons (HEMT) qui comprend une pluralité de couches semi-conductrices actives formées sur un substrat. Une électrode source, une électrode drain et une grille sont formées en contact électrique avec les multiples couches actives. Une couche d'espacement est formée sur au moins une partie d'une surface des multiples couches actives et recouvre la grille. Une plaque de champ est formée sur la couche d'espacement et électriquement reliée à l'électrode source, ladite plaque de champ réduisant le champ électrique maximal dans le HEMT.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Wide bandgap hemts with source connected field plates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wide bandgap hemts with source connected field plates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wide bandgap hemts with source connected field plates will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1638453

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.