B - Operations – Transporting – 81 – B
Patent
B - Operations, Transporting
81
B
B81B 1/00 (2006.01) B81C 1/00 (2006.01)
Patent
CA 2526114
The present invention relates to a method of fabricating at least one nanochannel in a semiconductor material applied on a substrate, comprising the semiconductor material being subjected to an etching treatment and said substrate to a bonding treatment so as to attach a covering layer to the substrate, in which bonding treatment the semiconductor material is applied as bonding agent, and wherein prior to etching, the semiconductor material is locally doped for the formation of electrodes.
L'invention concerne un procédé de fabrication d'au moins un nano-canal dans un matériau semi-conducteur appliqué sur un substrat et consistant à soumettre le matériau semi-conducteur à un traitement de gravure et ledit substrat à un traitement de collage, de manière à fixer une couche couvrante sur le substrat, dans le traitement de collage le matériau semi-conducteur étant appliqué comme agent de collage, et avant la gravure, à doper localement le matériau semi-conducteur aux fins de formation d'électrodes.
Bossche Adrianus
Kutchoukov Vladimir Gueorguiev
Laugere Frederic
Van Der Vlist Wim
Sim & Mcburney
Technische Universiteit Delft
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